Hiệu suất đi lại cao 600V BTA212X-600D 12A Triac
$0.125000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Giao thông vận tải: | Ocean,Land,Air,Express,Others |
Hải cảng: | SHANGHAI |
$0.125000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Giao thông vận tải: | Ocean,Land,Air,Express,Others |
Hải cảng: | SHANGHAI |
Mẫu số: YZPST-BTA212X-600D
Thương hiệu: Yzpst
Nguồn Gốc: Trung Quốc
IT(RMS): 12A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 120A
I2t: 78A2s
DI/dt: 50A/ μs
Đơn vị bán hàng | : | Piece/Pieces |
Loại gói hàng | : | 1. Bao bì chống điện trường 2. hộp carton 3. bím tóc |
Tải về | : |
BTA212 12A Triacs
YZPST-BTA212X-600D
CHỦ YẾU ĐẶC TRƯNG:
symbol |
value |
unit |
IT(RMS) |
12 |
A |
VDRM/VRRM |
600/800/1200 |
V |
VTM |
≤1.5 |
V |
Tuyệt đối Tối đa Xếp hạng:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200 |
V |
RMS on-state current |
IT(RMS) |
12 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
I2t value for fusing (tp=10ms) |
I2t |
78 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
5 |
W |
Đặc điểm điện (TJ = 25 ℃ trừ khi có quy định khác)
3 góc phần tư :
Parameter | Value | |||||||
Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 5 | 10 | 40 | 60 | mA | |
Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 80 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||||
dV/dt | MIN | 100 | 200 | 500 | 1000 | V/ µs |
4 góc phần tư :
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 40 | 60 | mA | |
Ⅰ-Ⅲ- Ⅳ | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/ µs |
Đặc điểm tĩnh
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=17A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 5 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
Nhiệt Điện trở
Symbol | Test Condition | Value | Unit | |
TO-220A(Ins) | 2.3 | |||
TO-220B(Non-Ins) | 1.5 | |||
TO-220F(Ins) | 2.5 | ℃/W | ||
Rth(j-c) | junction to case(AC) | TO-263 | 1.5 |
Gói dữ liệu cơ học
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