Khả năng ngắn mạch cao 10US 1200V Mô -đun IGBT 450A
$1152-99 Piece/Pieces
$82≥100Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Giao thông vận tải: | Ocean,Air |
Hải cảng: | SHANGHAI |
$1152-99 Piece/Pieces
$82≥100Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Giao thông vận tải: | Ocean,Air |
Hải cảng: | SHANGHAI |
Mẫu số: YZPST-450B120E53
Thương hiệu: Yzpst
VCES: 1200V
IC: 450m
ICRM: 900m
VGES: ±20V
Ptot: 3000W
YZPST-450B120E53
Fnaturns
VCE thấp (SAT) với công nghệ SPT+
VCE (SAT) với hệ số nhiệt độ dương
Bao gồm FWD chống song song nhanh và mềm nhanh
Khả năng ngắn mạch cao (10US)
Cấu trúc mô -đun tự cảm thấp
Maxmmum Ratmn tuyệt đối
Parameter |
Symbol |
CondMtMons |
Value |
UnMt |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mm, Tvj=25℃ |
1200 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
450 |
m |
Peak Collector Current |
ICRM |
ICRM =2IC |
900 |
m |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
3000 |
W |
Nhân vật IGBTMSMCS
Parameter |
Symbol |
CondMtMons |
Value |
UnMt |
||
MMn. |
Typ. |
Max. |
|
|||
Gate-emitter Threshold Voltage |
VGE(th) |
VGE=VCE, IC =3mm,Tvj=25℃ |
5.0 |
6.2 |
7.0 |
V |
Collector-Emitter Cut-off Current |
ICES |
VCE=1200V,VGE=0V, Tvj=25℃ |
|
|
1.0 |
mm |
VCE=1200V,VGE=0V, Tvj=125℃ |
|
|
5.0 |
mm |
||
Collector-Emitter Saturation Voltage |
VCE(sat) |
Ic=450m,VGE=15V, Tvj=25℃ |
|
1.85 |
|
V |
Ic=450m,VGE=15V, Tvj=125℃ |
|
2.05 |
|
V |
||
Input Capacitance |
Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
|
31.8 |
|
nF |
Output Capacitance |
Coes |
|
2.13 |
|
nF |
|
Reverse Transfer Capacitance |
Cres |
|
1.48 |
|
nF |
|
Internal Gate Resistance |
Rgint |
|
|
0.7 |
|
Ω |
Turn-on Delay Time |
td(on) |
IC =450 m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=25℃ |
|
320 |
|
ns |
Rise Time |
tr |
|
165 |
|
ns |
|
Turn-off Delay Time |
td(off) |
|
650 |
|
ns |
|
Fall Time |
tf |
|
124 |
|
ns |
|
Energy Dissipation During Turn-on Time |
Eon |
|
35 |
|
mJ |
|
Energy Dissipation During Turn-off Time |
Eoff |
|
42 |
|
mJ |
|
Turn-on Delay Time |
td(on) |
IC =450m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=125℃ |
|
350 |
|
ns |
Rise Time |
tr |
|
193 |
|
ns |
|
Turn-off Delay Time |
td(off) |
|
720 |
|
ns |
|
Fall Time |
tf |
|
156 |
|
ns |
|
Energy Dissipation During Turn-on Time |
Eon |
|
55 |
|
mJ |
|
Energy Dissipation During Turn-off Time |
Eoff |
|
64 |
|
mJ |
|
SC Data |
Isc |
Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2100 |
|
m |
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