$0.165000-49999 Piece/Pieces
$0.13≥50000Piece/Pieces
| Hình thức thanh toán: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Giao thông vận tải: | Ocean,Land,Express,Others |
| Hải cảng: | SHANGHAI |
Mẫu số: YZPST-BTA216X-600B
Thương hiệu: Yzpst
Nguồn Gốc: Trung Quốc
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
I2t: 98A2S
Di/dt: 100A/μs
IGM: 2A
VGM: 5W
PGM: 5W
| Đơn vị bán hàng | : | Piece/Pieces |
| Loại gói hàng | : | 1. Bao bì chống điện trường 2. hộp carton 3. bím tóc |
| Tải về | : |
|
bộ điều khiển.
NHỮNG ĐẶC ĐIỂM CHÍNH
|
Symbol |
Value |
Unit |
|
IT(RMS) |
16 |
A |
|
VDRM/VRRM |
600 |
V |
|
IGT |
≤10 |
mA |
Xếp hạng tuyệt đối của mẹ tôi
| Symbol | PARAMETER | Value | Unit | |
| IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤99℃ | 16 | A |
| Non repetitive surge peak on-state current | t=20ms | 140 | ||
| ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
| I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
| di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
| IGM | Peak gate current, | — | 2 | A |
| VGM | Peak gate voltage | — | 5 | W |
| PGM | Peak gate power | — | 5 | W |
| PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
| Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
| Tj | Operating junction temperature range | 125 | ℃ | |
Đặc điểm điện (TJ = 25。C, trừ khi có quy định khác)
Đặc điểm tĩnh
| Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
| MIN | TYPE | MAX | |||||
| IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
| VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
| VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
| VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
| IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
| Ⅰ-Ⅲ | - | - | 60 | mA | |||
| IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
| ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA | |
Đặc điểm động
| Symbol | Parameter | Test Condition | Value | Unit | |
| MIN | TYPE | ||||
| dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
| exponential waveform; gate open circuit | |||||
| dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16A; without snubber; gate open circuit | 28 | A/ms | |
| T | Gate controlled turn-on time | ITM = 20 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
| tgt | |||||
BƯU KIỆN CƠ KHÍ DỮ LIỆU
Điện thoại: 86-514-87782298
Whatsapp: +8613805278321
Địa chỉ: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Trang web: https://vi.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now