Khả năng dV / dt cao 1600V thyristor công suất cao cho các ứng dụng điều khiển pha

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3559TD16K

  1600

  1600

  1700

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

20 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  3500

A

Sinewave,180^o conduction,T_c=70^oC

RMS value of on-state current

I_TRMS

  7000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

42000

38000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

7.5x10⁶

A²s

8.3 msec

Latching current

I_L

    1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.95

V

I_TM = 5000 A; Tj = 125 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

      800

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

      300

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current required to trigger all units

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

20

V