SG50AA120 trình điều khiển led mờ
$4.5≥1000Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Đặt hàng tối thiểu: | 1000 Piece/Pieces |
Giao thông vận tải: | Ocean,Air |
Hải cảng: | Shanghai |
$4.5≥1000Piece/Pieces
Hình thức thanh toán: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Đặt hàng tối thiểu: | 1000 Piece/Pieces |
Giao thông vận tải: | Ocean,Air |
Hải cảng: | Shanghai |
Mẫu số: YZPST-SG50AA120
Thương hiệu: YZPST
Đơn vị bán hàng | : | Piece/Pieces |
Loại gói hàng | : | 1. Bao bì chống tĩnh điện 2. Hộp carton 3. Bao bì nhựa bảo vệ |
Triac YZPST-SG50AA120
SG50AA120 trình điều khiển led mờ
TRIAC (LOẠI ISOLATED)
SG50AA là các triac đúc riêng biệt phù hợp cho nhiều ứng dụng như máy photocopy, lò vi sóng, công tắc trạng thái rắn, điều khiển động cơ, điều khiển ánh sáng và điều khiển lò sưởi.● CNTT (AV) 50A
● Khả năng tăng cao 330A
● Thiết bị đầu cuối Tab
Symbol |
Item |
|
|
|
Unit |
SG50AA80 |
SG50AA120 |
SG50AA160 |
|||
VDRM |
Repetitive Peak Off-State Voltage |
800 |
1200 |
1600 |
V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT(RMS) |
R.M.S. On-State Current |
Tc=58℃ |
50 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
450 |
A |
I2t |
I2t |
Value for one cycle of surge current |
730 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG(AV) |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25℃,VD=1/2VDRM, |
100 |
A/μs |
Tj |
Operating Junction Temperature |
|
-25 to +125 |
℃ |
Tstg |
Storage Temperature |
|
-40 to +125 |
℃ |
|
Mounting Torque(M4) |
Recommended Value 1.0-1.4(10-14) |
1.5(15) |
N.m |
|
Mass |
Typical value |
2 |
g |
Điện a l C h ara c t e rories
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V |
|
I + GT1 |
1 |
Gate Trigger Current, max |
Tj=25℃,IT=1A,VD=6V |
80 |
mA |
I -GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
I + GT3 |
3 |
|
- |
||
I -GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
V+ GT1 |
1 |
Gate Trigger Voltage, max |
Tj=25℃,IT=1A,VD=6V |
3 |
V |
V-GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
V+ GT3 |
3 |
|
- |
||
V-GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
VGD |
Non-Trigger Gate Voltage, min |
Tj=125℃,VD=1/2VDRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs |
|
dv/dt]c |
Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs |
|
IH |
Holding Current, typ. |
Tj=25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
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